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  semitrans ? 3 trench igbt modules skm 200gb123d skm 200gal123d skm 200gar123d features   
                             
  
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    12  typical applications  +*      34 gb gal gar absolute maximum ratings .  5 16 7*    
# symbol conditions values units igbt  *8 . 9 5 16 7* /122  & * . 9 5 /62 7* .  5 16 7* 122 + .  5 ;6 7* /;2 + & *< & *< 51%& *  022 +  =8 > 12 
  ** 5 $22 ?  =8 @ 12 ?  *8 a /122  . 9 5 /16 7* /2 b inverse diode & ( . 9 5 /62 7* .  5 16 7* 122 + .  5 ;2 7* /02 + & (< & (< 51%& (  022 + & (
5 /2 ?  c . 9 5 /62 7* /dd2 + freewheeling diode & ( . 9 5 /62 7* .  5 16 7* 1$2 + .  5 ;2 7* /;2 + & (< & (< 51%& (  d22 + & (
5 /2 ?  c . 9 5 /62 7* /;22 + module & < 622 + . 9 ' d2 ccc e /62 /16 7* .   ' d2ccce /16 7*   +* /  c 1622  characteristics .  5 16 7*    
# symbol conditions min. typ. max. units igbt  =8   =8 5  *8  & * 5 $ + d6 66 $6  & *8  =8 5 2   *8 5  *8 . 9 5 16 7* 2/ 20 +  *82 . 9 5 16 7* /d /$  . 9 5 /16 7* /$ /;   *8  =8 5 /6  . 9 5 167* f00 g00 h . 9 5 /167* /2 /1$$ h  *8   & *  5 /62 +  =8 5 /6  . 9 5 7* 
c 16 0  *  /2 /0 ( *   *8 5 16  =8 5 2  # 5 / !i /6 1 ( *  2; /1 ( j =  =8 5 '; ' e12 /622 * < = . 9 5 7* 16 k    112 d22   < = 5 6$ h  ** 5 $22 /22 122  8  & *  5 /62+ 1d l  ## < =## 5 6$ h . 9 5 /16 7* $22 ;22  #  =8 5 '/6 f2 /22  8 ## /f l <  9'
 &=-. 22g mno skm 200gb123d 1 07-03-2007 raa ? by semikron
semitrans ? 3 trench igbt modules skm 200gb123d skm 200gal123d skm 200gar123d features   
                             
  
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    12  typical applications  +*      34 gb gal gar characteristics symbol conditions min. typ. max. units inverse diode  ( 5  8* & (  5 /62 +?  =8 5 2  . 9 5 16 7* 
c 1 16  . 9 5 /16 7* 
c /;   (2 . 9 5 16 7* // /1  . 9 5 /16 7*   ( . 9 5 16 7* $ ;f h . 9 5 /16 7* h & << & (  5 /62 + . 9 5 /16 7* g2 + j  n 5 /622 +nb ; b* 8   =8 5 '/6 ?   5 $22 $$ l <  9',
  216 mno freewheeling diode  ( 5  8* & (  5 122 +?  =8 5 2  . 9 5 16 7* 
c 1 16  . 9 5 /16 7* 
c /;   (2 . 9 5 16 7* // /1  . 9 5 /16 7*   ( . 9 5 16 7* d6 $6  . 9 5 /16 7*  & << & (  5 122 + . 9 5 /16 7* /12 + j  n 5 1222 +nb // b* 8   =8 5 2 ?  ** 5 $22  l <  9'(,
  2/; mno module  *8 /6 12 ! < **pe88p c  '
.  5 16 7* 206 h .  5 /16 7* 26 h <  '
   220; mno      q $ 0 6      $ d 16 6   016  this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 200gb123d 2 07-03-2007 raa ? by semikron
semitrans ? 3 trench igbt modules skm 200gb123d skm 200gal123d skm 200gar123d features   
                             
  
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    12  typical applications  +*      34 gb gal gar z th symbol conditions values units z th(j-c)l <   5 / 6g qno <   5 1 10 qno <   5 0 $; qno <   5 d /1 qno    5 / 220     5 1 222;f     5 0 2221     5 d 22221  z th(j-c)d <   5 / /f2 qno <   5 1 $$ qno <   5 0 /1 qno <   5 d 1 qno    5 / 220d;     5 1 222f1     5 0 22ff     5 d 22221  skm 200gb123d 3 07-03-2007 raa ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 200gb123d 4 07-03-2007 raa ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode peak reverse recovery charge skm 200gb123d 5 07-03-2007 raa ? by semikron
ul recognized file 63 532 * , 6$ * , 6$ =- * , 6f r 6$ =+ * , 6; r 6$ =+< skm 200gb123d 6 07-03-2007 raa ? by semikron


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